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Posted on May 9, 2019May 11, 2019 by Pulse Assent

BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects

Silicon carbide
Defects
Integrated circuit technology
Semiconductor devices
Electronic equipment and components

Link: BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects
Source: BSI Standards

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CategoriesBSI Standards Tagscommunications

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